PART |
Description |
Maker |
G12072-54-15 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
G10342-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
|
FU-319SPP-C6 |
InGaAs PD PREAMP MODULE FOR THE 1.31 mm AND 1.55 mm WAVELENGTH RANGE 铟镓砷放电前置放大器模块.31毫米.55毫米波长范围 InGaAs PD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FRM3Z231LT FRM3Z231KT |
InGaAs-PIN/Preamp Receiver Pin Preamplifier Modules
|
EUDYNA[Eudyna Devices Inc] FUJITSU
|
FRM5N141GW |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
FRM5N143DS |
InGaAs-APD/Preamp Receiver
|
List of Unclassifed Manufacturers ETC[ETC]
|
G8338-02 G7871 G7871-02 G8795-02 G8338 G8341 G8341 |
TRANS PREBIASED PNP 150MW SOT523 Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 200V; Case Size: 25x25 mm; Packaging: Bulk InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
|
8C443 |
PIN/Preamp(Datacom, Telecom) 密码/前置放大器(数据通信,电信) PIN/Preamp(Datacom/ Telecom)
|
NXP Semiconductors N.V. Mitel Networks Corporation Mitel Semiconductor
|
FU-319SPA-CV6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块,用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
PPA1515-155-A-FP PPA1515-155-D-DN PPA1515-622-A-FP |
Pigtailed PIN-PREAMP 尾纤的PIN前级放大
|
Mitsubishi Electric, Corp. Agilent(Hewlett-Packard)
|
G9845-14 |
GaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343 |
InGaAs PIN photodiode with preamp Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; Case Size: 30x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 25x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; Case Size: 22x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 25x45 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; Case Size: 25x50 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 25x40 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 30x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk Optoelectronic 光电 InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
HAMAMATSU[Hamamatsu Corporation] NXP Semiconductors N.V. Hamamatsu Photonics K.K.
|